RXH100N03 Datasheet, PDF (4/7 Pages) Rohm – 4V Drive Nch MOSFET

RXH100N03
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
100
V_GS= 4.0V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
1
10
100
DRAIN-CURRENT : I_D[A]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
100
V_GS=0V
Pulsed
10
1
Ta=125°C
Ta=75°C
Ta=25°C
0.1
Ta=-25°C
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : V_SD [V]
10000
1000
Fig.11 Switching Characteristics
t_d(off)
t_f
Ta=25°C
V_DD=15V
V_GS=10V
R_G=10Ω
Pulsed
100
t_r
10
1
0.01
0.1
t_d(on)
1
10
100
DRAIN-CURRENT : I_D[A]
　
Data Sheet
Fig.8 Forward Transfer Admittance
vs. Drain Current
100
V_DS= 10V
Pulsed
10
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta=-25°C
0.1
0.01
0.1
1
10
100
DRAIN-CURRENT : I_D[A]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
50
Ta=25°C
Pulsed
40
I_D= 5.0A
30
I_D= 10.0A
20
10
0
0
10
5
10
GATE-SOURCE VOLTAGE : V_GS[V]
Fig.12 Dynamic Input Characteristics
8
6
4
Ta=25°C
V_DD=15V
2
I_D= 10A
R_G=10Ω
Pulsed
0
0
5
10
15
20
TOTAL GATE CHARGE : Qg [nC]
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2011.04 - Rev.A