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RXH100N03 Datasheet, PDF (2/7 Pages) Rohm – 4V Drive Nch MOSFET
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RXH100N03
 Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
30
-
1.0
-
-
-
8.0
-
-
-
-
-
-
-
-
-
-
　
Typ.
-
-
-
-
9.5
12
13
-
800
270
140
10
45
50
15
11.0
2.4
4.8
Max.
10
-
1
2.5
13
17
18
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=10A, VGS=10V
m ID=10A, VGS=4.5V
ID=10A, VGS=4.0V
S ID=10A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=5A, VDD 15V
ns VGS=10V
ns RL=3.0
ns RG=10
nC ID=10A, VDD 15V
nC VGS=5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=10A, VGS=0V
Data Sheet
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2011.04 - Rev.A
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