RW1E025RP Datasheet, PDF (4/7 Pages) Rohm – 4V Drive Pch MOSFET

RW1E025RP
　
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
10
V_DS=-10V
pulsed
1
T_a=125°C
T_a=75°C
T_a=25°C
T_a=-25°C
0.1
0.01
0.001
0.01
0.1
1
10
Drain Current : -I_D [A]
Fig.9 Source Current vs. Source-Drain Voltage
10
V_GS=0V
pulsed
T_a=125°C
T_a=75°C
1
T_a=25°C
T_a=-25°C
0.1
0.01
0.0
1000
100
10
1
0.01
0.5
1.0
1.5
Source-Drain Voltage : -V_SD [V]
Fig.11 Switching Characteristics
V_DD≒-15V
V_GS=-10V
R_G=10W
t_f
T_a=25°C
Pulsed
t_d(off)
t_r
t_d(on)
0.1
1
10
Drain Current :- I_D [A]
Fig.8 Typical Transfer Characteristics
10
V_DS=-10V
pulsed
1
T_a=125°C
T_a=75°C
T_a=25°C
T_a=-25°C
0.1
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-Source Voltage : -V_GS [V]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
200
T_a=25°C
pulsed
150
I_D=-1.2A
I_D=-2.5A
100
50
0
0
2
4
6
8
10
Gate-Source Voltage : -V_GS [V]
Fig.12 Dynamic Input Characteristics
10
T_a=25°C
V_DD=-15V
I_D=-2.5A
8 _Pulsed
6
4
2
0
0
2
4
6
8
10
12
Total Gate Charge : Q_g [nC]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.03 - Rev.A