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RW1E025RP Datasheet, PDF (2/7 Pages) Rohm – 4V Drive Pch MOSFET
RW1E025RP
 Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
IGSS
V(BR)DSS
IDSS
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
30
-
1.0
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
55
85
95
-
480
70
70
7
12
50
22
5.2
1.6
1.6
Max.
10
-
1
2.5
75
115
125
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=2.5A, VGS=10V
m ID=1.2A, VGS=4.5V
ID=1.2A, VGS=4V
S ID=2.5A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=1.2A, VDD 15V
ns VGS=10V
ns RL=12.5
ns RG=10
nC ID=2.5A
nC VDD 15V
nC VGS=5V
Data Sheet
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=2.5A, VGS=0V
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2011.03 - Rev.A