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RSD050N10 Datasheet, PDF (4/7 Pages) Rohm – 4V Drive Nch MOSFET
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RSD050N10
　
DataSheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
VDS=10V
pulsed
10
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.01
0.1
1
10
Drain Current : ID [A]
Fig.9 Source Current vs. Source-Drain Voltage
10
VGS=0V
pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.0
10000
1000
100
0.5
1.0
1.5
Source-Drain Voltage : VSD [V]
Fig.11 Switching Characteristics
tf
td(off)
VDD≒50V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
td(on)
10
tr
1
0.01
0.1
1
10
Drain Current : ID [A]
Fig.8 Typical Transfer Characteristics
10
VDS=10V
pulsed
1
Ta=125°C
Ta=75°C
0.1
Ta=25°C
Ta=-25°C
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate-Source Voltage : VGS [V]
Fig.10 Static Drain-Source On-State Resistance vs.
Gate-Source Voltage
500
Ta=25°C
pulsed
400
300
ID=5.0A
ID=2.5A
200
100
0
0
2
4
6
8
10
Gate-Source Voltage : VGS [V]
Fig.12 Dynamic Input Characteristics
10
Ta=25°C
VDD=50V
8
ID=5A
Pulsed
6
4
2
0
0
5
10
15
20
Total Gate Charge : Qg [nC]
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