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| RSD050N10 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch MOSFET | |||
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4V Drive Nch MOSFET
RSD050N10
ï¬Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
3) Parallel use is easy.
ï¬Applications
Switching
ï¬Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
ýõü
üõø
ùõú
÷õü
÷õþü
÷õýü
Ã·ÃµÄ Ã¹ÃµÃº
ïøð
ïùð
ïúð ùõú
÷õü
øõ÷
ï¬Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
CPT3
TL
2500
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
100
V
VGSS
ï±20
V
ID
ï±5.0
A
IDP *1
ï±20
A
IS
5.0
A
ISP *1
20
A
PD *2
15
W
Tch
150
°C
Tstg ï55 to +150 °C
*1 Pwâ¦10ïs, Duty cycleâ¦1%
*2 Tc=25°C
ï¬Inner circuit
â1
(1) Gate
â2
(2) Drain
(3) Source
*1 ESD Protection Diode
*2 Body Diode
(1)
(2)
(3)
ï¬Thermal resistance
Parameter
Channel to Case
* Tc=25ï°C
Symbol
Rth (ch-c) *
Limits
8.33
Unit
°C / W
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
1/6
2012.02 - Rev.B
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