R6006ANX Datasheet, PDF (4/6 Pages) Rohm – 10V Drive Nch MOSFET

R6006ANX
100
V_GS= 0V
Pulsed
10 _{Ta= 125°C}
Ta= 75°C
Ta= 25°C
1 ^{Ta= -25°C}
0.1
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : V_SD (V)
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
10000
1000
C_iss
100
C_rss
C_oss
10 _{Ta= 25°C}
f= 1MHz
V_GS= 0V
1
0.1
1
10
100 1000
DRAIN-SOURCE VOLTAGE : V_DS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Data Sheet
Ta= 25°C
V_DD= 300V
10 _{ID= 6A}
R_G= 10Ω
Pulsed
5
0
0
5
10
15
20
TOTAL GATE CHARGE : Q_g (nC)
Fig.12 Dynamic Input Characteristics
1000
100
10
0.1
Ta= 25°C
di / dt= 100A / µs
V_GS= 0V
Pulsed
1
10
REVERSE DRAIN CURRENT : I_DR (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
10000
1000
t_f
100
t_d(off)
Ta= 25°C
V_DD= 300V
V_GS= 10V
R_G= 10Ω
Pulsed
10
t_r
t_d(on)
1
0.01
0.1
1
10
100
DRAIN CURRENT : I_D (A)
Fig.14 Switching Characteristics
10
Ta = 25°C
1
Single Pulse : 1Unit
Rth(ch-a)(t) = r (t) × Rth (ch-a)
Rth(ch-a) = 52.3 °C/W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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2009.01 - Rev.A