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R6006ANX Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET
10V Drive Nch MOSFET
R6006ANX
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS)
guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zDimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zApplications
Switching
zPackaging specifications
Package
Bulk
Type Code
−
Basic ordering unit (pieces)
500
R6006ANX
zInner circuit
∗1
(1)
(2)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
600
Gate-source voltage
VGSS
±30
Drain current
Continuous
ID ∗3
±6
Pulsed
IDP ∗1
±24
Source current
(Body Diode)
Continuous
IS ∗3
6
Pulsed
ISP ∗1
24
Avalanche current
IAS ∗2
3
Avalanche energy
EAS ∗2
2.4
Total power dissipation (Tc=25°C)
PD
40
Channel temperature
Tch
150
Range of storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed
−55 to +150
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
3.125
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Unit
°C/W
∗1 Body Diode
(3)
(1) Gate
(2) Drain
(3) Source
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2009.01 - Rev.A