R5205CND Datasheet, PDF (4/6 Pages) Rohm – 10V Drive Nch MOSFET

R5205CND
15
Ta= 25°C
VDD= 250V
ID= 5A
10
RG= 10
Pulsed
5
0
0
5
10
15
TOTAL GATE CHARGE : Q _g (nC)
Fig.10 Dynamic Input Characteristics
1000
100
10
0.1
Ta= 25°C
di / dt= 100A / μs
VGS= 0V
Pulsed
1
10
100
REVERSE DRAIN CURRENT : I_DR (A)
Fig.11 Reverse Recovery Time
vs.Reverse Drain Current
Data Sheet
10000
tf
1000
100
td(off)
Ta= 25°C
VDD= 250V
VGS= 10V
RG= 10
Pulsed
10
tr
td(on)
1
0.01
0.1
1
10
DRAIN CURRENT : I_D (A)
Fig.12 Switching ɹCharacteristics
10
Ta = 25°C
Single Pulse : 1Unit
1 _{Rth (ch-a) (t) = ́çïĻðç×Rth (ch-a)}
Rth (ch-a) = 133.2°C/W
0.1
0.01
0.001
0.0001
0.0001 0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.13 Normalized Transient Thermal Resistance vs. Pulse Width
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2010.12 - Rev.A