R5205CND Datasheet, PDF(1/6 Page) Rohm – 10V Drive Nch MOSFET

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R5205CND Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET

R5205CND

ï¬ Structure

Silicon N-channel MOSFET

ï¬Features

1) Low resistance.

2) High speed switching.

ï¬ Application

Switching

ï¬ Dimensions (Unit : mm)

CPT3

6.5

5.1

2.3

0.5

(1)Gate

(2)Drain

(3)Source

0.75

0.65

0.9 2.3

(1)

(2)

(3) 2.3

0.5

1.0

Abbreviated symbol : R5205C

ï¬ Packaging specifications

Package

Type Code

Basic ordering unit (pieces)

R5205CND

Taping

TL

2500

ï¡

ï¬ Inner circuit

â2

â1

ï¬ Absolute maximum ratings (Ta = 25ï°C)

Parameter

Symbol Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Continuous

Pulsed

Source current

(Body Diode)

Continuous

Pulsed

Avalanche current

Avalanche energy

Total power dissipation (Tc=25ï°C)

Channel temperature

Range of storage temperature

VDSS

525

V

VGSS

ï±30

V

ID *1

ï±5

A

IDP *2

ï±20

A

IS *1

5

A

ISP *2

20

A

IAS *3

2.5

A

EAS *3

1.6

mJ

PD

40

W

Tch

150

ï°C

Tstg -55 to +150 ï°C

*1 Limited only by maximum temperature allowed.

*2 Pwï£10ïs Duty Cycleï£1%

*3 L 500ïH, VDD=50V, Rg=25ï STARTING Tch=25ï°C

(1)

(1) Gate

(2) Drain

(3) Source

ï¬ Thermal resistance

Parameter

Channel to case

* Limited only by maximum temperature allowed.

Symbol

Rth (ch-c)*

Limits

3.13

Unit

ï°C / W

(2)

(3)

â1 Body Diode

â2 ESD Protection Diode

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2010.12 - Rev.A

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