QH8M22 Datasheet, PDF (4/22 Pages) Rohm – 40V Nch+Pch Middle Power MOSFET

QH8M22
　 　 　 　　 　
　 　 　 　 　 　 　 　 _Datasheet
lGate charge characteristics (T_a = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
<Tr2>
Q_g*5
Q_gs*5
Q_gd*5
V_DD ⋍ 20V
I_D = 4.5A
V_GS = 10V
V_GS = 4.5V
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Q_g*5
Q_gs*5
Q_gd*5
V_GS = -10V
V_DD ⋍ -25V
I_D = -2A
V_GS = -4.5V
Values
Unit
Min. Typ. Max.
- 2.6 -
- 1.3 -
nC
- 0.5 -
- 0.4 -
Values
Unit
Min. Typ. Max.
- 9.5 -
- 4.4 -
nC
- 1.6 -
- 1.2 -
lBody diode electrical characteristics (Source-Drain) (T_a = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Continuous forward current
Pulse forward current
Forward voltage
Reverse recovery time
Reverse recovery charge
I_S
I_SP*1
V_SD*5
t_rr*5
Q_rr*5
T_a = 25℃
V_GS = 0V, I_S = 1.25A
I_S = 1.25A, V_GS = 0V
di/dt = 100A/μs
-
- 1.25
A
-
- 18
-
- 1.2 V
- 11.1 - ns
- 4.1 - nC
<Tr2>
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Continuous forward current
Pulse forward current
I_S
I_SP*1
T_a = 25℃
-
- -1.25
A
-
- -8.0
Forward voltage
V_SD*5 V_GS = 0V, I_S = -1.25A
-
- -1.2 V
Reverse recovery time
Reverse recovery charge
t_{rr*5 IS = -1.25A, VGS = 0V}
Q_rr*5 ^{di/dt = 100A/s}
- 31.6 - ns
- 48.4 - nC
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　
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4/19
　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
20160804 - Rev.002