QH8M22 Datasheet, PDF (2/22 Pages) Rohm – 40V Nch+Pch Middle Power MOSFET

QH8M22
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　　　　
Symbol
R_thJA*3
R_thJA*4
Values
Unit
Min. Typ. Max.
-
- 83.3
℃/W
-
- 113
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol Type
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V_(BR)DSS ^{Tr1 VGS = 0V, ID = 1mA}
Tr2 V_GS = 0V, I_D = -1mA
40 -
-40 -
Breakdown voltage
temperature coefficient
　^ΔV(BR)DSS　 Tr1 ^ID ^{= 1mA, referenced to 25℃} - 26.2
　_　 ^ΔT_{j 　} 　 _Tr2 I_D = -1mA, referenced to 25℃ _-
-50
-
V
-
-
mV/℃
-
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
I_DSS ^{Tr1 VDS = 40V, VGS = 0V}
-
-
1
μA
Tr2 V_DS = -40V, V_GS = 0V
-
- -1
I_GSS ^{Tr1 VDS = 0V, VGS = ±20V}
-
- ±100 nA
Tr2 V_DS = 0V, V_GS = ±20V
-
- ±10 μA
Tr1 V_DS = V_GS, I_D = 10μA 1.0 - 2.5
V_GS(th)
V
Tr2 V_DS = -10V, I_D = -1mA -1.0 - -3.0
　^ΔV_GS(th) 　 Tr1 ^ID ^{= 1mA, referenced to 25℃}
-
-4.9
-
mV/℃
　_　 ΔT_{j 　} 　 _Tr2 I_D = -1mA, referenced to 25℃ _-
3.3
-
Static drain - source
on - state resistance
Gate resistance
V_GS = 10V, I_D = 4.5A
Tr1
R_DS(on)*5
V_GS = 4.5V, I_D = 4.5A
V_GS = -10V, I_D = -2.0A
Tr2
V_GS = -4.5V, I_D = -2.0A
Tr1
R_G
f=1MHz, open drain
Tr2
- 34.6 46.0
- 43.9 59.0
mΩ
- 130 190
- 180 260
- 3.5 -
Ω
- 11.2 -
Forward Transfer
Admittance
|Y_fs|^{*5 Tr1 VDS = 5V, ID = 4.5A}
2.6 - -
S
Tr2 V_DS = -10V, I_D = -2.0A 1.2 -
-
*1 Pw ≦ 10μs, Duty cycle ≦ 1%
*2 Tr1: L ⋍ 0.1mH, V_DD = 20V, R_G = 25Ω, STARTING T_j = 25℃ Fig.3-1,3-2
Tr2: L ⋍ 0.1mH, V_DD = -20V, R_G = 25Ω, STARTING T_j = 25℃ Fig.6-1,6-2
*3 Mounted on a ceramic boad (Pw=5s)(30×30×0.8mm)
*4 Mounted on a FR4 (25×25×0.8mm)
*5 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　
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2/19
　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
20160804 - Rev.002