EMZ7_08 Datasheet, PDF (4/5 Pages) Rohm – General purpose transistor (dual transistors)

Transistors
EMZ7 / UMZ7N
Tr2 (PNP)
1000
500
VCE=2V
200
100
50
20
10
5
2
1
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.8 Grounded emitter propagation
characteristics
1000
500
200
100
50
20
10
5
Ta=125°C
Ta=25°C
Ta= −40°C
VCE=2V
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.9 DC current gain vs.
collector current
1000
500
IC/IB=20
200
100
50
Ta=125°C
Ta=25°C
20
Ta= −40°C
10
5
2
1
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.10 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
500
Ta=25°C
200
100
50
IC / IB=50
20
IC / IB=20
10 ^{IC / IB=10}
5
2
1
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.11 Collector-emitter saturation voltage
vs. collector current
10000
5000
IC/IB=20
1000
500
VCE=2V
Ta=25°C
2000
200
1000
Ta=25°C ^{Ta= −40°C}
100
500
50
Ta=125°C
200
20
100
10
50
5
20
10
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.12 Base-emitter saturation voltage
vs. collector current
2
1
1 2 5 10 20 50 100 200 500 1000
EMITTER CURRENT : IC (mA)
Fig.13 Gain bandwidth product vs.
emitter current
1000
500
200
100
50
20
10
5
IE=0A
f=1MHz
Ta=25°C
Cib
Cob
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.14
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.A
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