EMZ7_08 Datasheet, PDF (3/5 Pages) Rohm – General purpose transistor (dual transistors)

Transistors
EMZ7 / UMZ7N
zElectrical characteristic curves
Tr1 (NPN)
1000
500
VCE=2V
200
100
50
20
10
5
2
1
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.1 Grounded emitter propagation
characteristics
1000
500
200
100
50
Ta=125°C
25°C
−40°C
VCE=2V
20
10
5
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.2 DC current gain vs.
collector current
1000
500
IC/IB=20
200
100
50
Ta=125°C
25°C
20
−40°C
10
5
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
Ta=25°C
500
200
100
50
20 IC/IB=50
10
20
5
10
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
10000
5000
2000
1000
500
Ta=−40°C
25°C
125°C
IC/IB=20
200
100
50
20
10
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
1000
500 VCE=2V
Ta=25˚C
200 ^Pulsed
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Collector output capacitance
Emitter input capacitance ^{vs. base voltage}
1000
500
200
100
50
20
10
5
IE=0A
f=1MHz
Ta=25°C
Cib
Cob
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Rev.A
3/4