EMZ1T2R Datasheet, PDF (4/5 Pages) Rohm – General purpose transistor (dual transistors)

Transistors
Tr2 (PNP)
−50
Ta=100˚C
−20
25˚C
−40˚C
−10
−5
VCE=−6V
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.12 Grounded emitter propagation
characteristics
EMZ1 / UMZ1N / IMZ1A
−10
Ta=25˚C
−35.0
−31.5
−8
−28.0
−24.5
−6
−21.0
−17.5
−4
−14.0
−10.5
−2
−7.0
−3.5µA
IB=0
0
−0.4 −0.8 −1.2 −1.6 −2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.13 Grounded emitter output
characteristics ( I )
−100
Ta=25˚C
−500
−80 −450
−400
−350
−300
−60
−250
−200
−40
−150
−100
−20
−50µA
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.14 Grounded emitter output
characteristics ( II )
500
Ta=25˚C
200
VCE=−5V
−3V
−1V
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.15 DC current gain vs. collector
current ( I )
500
Ta=100˚C
25˚C
200
−40˚C
100
50
−0.2 −0.5 −1 −2
VCE=−6V
−5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.16 DC current gain vs. collector
current ( II )
−1
Ta=25˚C
−0.5
−0.2
−0.1
−0.05
IC/IB=50
20
10
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.17 Collector-emitter saturation
voltage vs. collector current ( I )
−1
1000
lC/lB=10
Ta=25˚C
VCE=−12V
−0.5
500
−0.2
200
Ta=100˚C
−0.1
25˚C
−40˚C
100
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.18 Collector-emitter saturation
voltage vs. collector current ( II )
50
0.5 1 2
5 10 20
50 100
EMITTER CURRENT : IE (mA)
Fig.19 Gain bandwidth product vs.
emitter current
20
Cib
10
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cob
5
2
-0.5 -1 -2
-5 -10 -20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.20 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.A
4/4