EMZ1T2R Datasheet, PDF (2/5 Pages) Rohm – General purpose transistor (dual transistors)

Transistors
EMZ1 / UMZ1N / IMZ1A
zElectrical characteristics (Ta = 25°C)
Tr1 (NPN)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 7
−
−
V IE=50µA
Collector cutoff current
ICBO
−
− 0.1 µA VCB=60V
Emitter cutoff current
IEBO
−
− 0.1 µA VEB=7V
Collector-emitter saturation voltage VCE (sat) − − 0.4 V IC/IB=50mA/5mA
DC current transfer ratio
hFE 120 − 560 − VCE=6V, IC=1mA
Transition frequency
fT
− 180 − MHz VCE=12V, IE=−2mA, f=100MHz
Output capacitance
Cob − 2 3.5 PF VCB=12V, IE=0A, f=1MHz
Tr2 (PNP)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −60 − − V IC=−50µA
Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA
Emitter-base breakdown voltage
BVEBO −6 − − V IE=−50µA
Collector cutoff current
ICBO
−
− −0.1 µA VCB=−60V
Emitter cutoff current
IEBO
−
− −0.1 µA VEB=−6V
Collector-emitter saturation voltage VCE (sat) − − −0.5 V IC/IB=−50mA/−5mA
DC current transfer ratio
hFE 120 − 560 − VCE=−6V, IC=−1mA
Transition frequency
fT
− 140 − MHz VCE=−12V, IE=2mA, f=100MHz
Output capacitance
Cob − 4 5 PF VCB=−12V, IE=0A, f=1MHz
zPackaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
EMZ1
UMZ1N
IMZ1A
T2R
8000
Taping
TR
3000
T108
3000
zElectrical characteristic curves
Tr1 (NPN)
50
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
100 _Ta=25˚C
80
60
40
0.50mA
00.4.405mmAA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
20
0.05mA
IB=0A
0
0 0.4
0.8
1.2 1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( I )
10
Ta=25˚C
8
30µA
27µA
24µA
21µA
6
18µA
15µA
4
12µA
9µA
6µA
2
3µA
0
IB=0A
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( II )
Rev.A
2/4