BD9639MWV Datasheet, PDF (4/5 Pages) Rohm – Semiconductor integrated circuit

4/4
■Instruction for use
1．Board patterning
・VBAT,VBAT2,VBAT3,VBAT4,VBAT5,VBAT6 are must be connected to power supply on the board.
・VCC must be connected to VOUT1 output on the board.
・ALL PGND and AGND must be connected to GND on the board.
・ALL power supply line and GND terminals must be wired with wide/short pattern in order to achieve substantially low impedance.
2. Peripheral circuitry
・Use low ESR ceramic capacitor for bypass condenser between power supply and GND terminal and place capacitor right next to the IC pins.
・Place external components such as L and C by IC with wide/short pattern.
・Draw output voltage from each end of capacitor.
・Causing short circuit at CH1 output will overload the external diode and may breakdown the component.
Prepare physical countermeasures by adding poli-switches and fuses to avoid excess current flow.
3．Start-up
・Keep light load condition by starting up the device.
・Make it to PWM mode (XSHDN24=L→H) after CH1 is started up in PFM mode (XSHDN1=L→H), and the VOUT1 output voltage stands up.
Moreover, start it about the start of CH3・CH5・CH6 since the PWM mode (Contain it simultaneously).
4．Absolute maximum ratings
・The quality control of the product has exercised adequate care, however operating above the absolute maximum ratings of supply voltage and/or
operational temperature range may cause decay and destroy the IC. If specific mode such that exceeding the Absolute Maximum ratings is expected,
please have physical countermeasure such as adding fuses and poli-switches etc.
5．Thermal design
・Take consideration of power dissipation at actual device usage to ensure the satisfactory thermal design margin. (Refer page 6)
6．Terminal to Terminal short / mis-mounting
・While mounting IC on the board, check direction and shift of the IC. If inadequately mounted, IC might be breakdown. Additionally short circuit from
unwanted contamination at power supply and GND and/or between any terminals also may cause the defect.
7．Operating in strong electromagnetic field
・Please pay attention using device in the strong electromagnetic field. Device may cause malfunction.
8．Thermal shut down.(TSD)
・Main purpose of TSD is to shutting IC down from runaway effect. It is not to compensate or to protect IC itself . Therefore, please do not continuously
operate the IC after TSD circuit is activated and/or premise operations such that TSD circuit function to be used.
9．Inspection with set board
・While connecting capacitor to Low impedance pins, please discharge capacitor by one process by another to prevent stressing the IC. While
mounting and removing the IC to/from the Board in the inspection process, be sure to turn off the power supply by each action. Moreover equip
ground earth in assembling process for ESD protection and handle with care during the test and/or transportation.
10．Input terminals
・This IC is a monolithic IC, and has P⁺ isolation and P substrate for the element separation. Therefore, a parasitic PN junction is firmed in this P-layer
and N-layer of each element. For example shown in below picture, the resistor or the transistor is connected to the terminal. When the GND voltage
potential is greater than the voltage potential at Terminals A or B, the PN junction operates as a parasitic diode. In addition, the parasitic NPN transistor
is formed in said parasitic diode and the N layer of surrounding elements close to said parasitic diode. These parasitic elements are formed in the IC
because of the voltage relation. The parasitic element operating causes the wrong operation and destruction. Therefore, please be careful so as not to
operate the parasitic elements by applying lower voltage than GND (P substrate) to input terminals. Moreover, please apply each input terminal with
lower than the power-supply voltage or equal to the specified range in the guaranteed voltage when the power-supply voltage being applied
Terminal A
P⁺
N
Stray component
Resistor
P P⁺
N
N
P
substrat
e
GND
Terminal A
Terminal B
C
Stray
component
P⁺
N
Transistor (NPN)
B
E
Terminal
B
BC
N
P
N
P⁺
N
P
substrat
e
E
Neighborhood
component
Stray component
GND
Stray component
GND
GND
implified IC structure
11．Usage of this product
・This IC is designed to be used in DSC/DVD application.
・Upon using our product to equipments or devices other than above mentioned application, please be sure to consult with our sales representative in
advance.
REV. B