UMF28N Datasheet, PDF (3/5 Pages) Rohm – Power management (dual transistors)

Transistors
UMF28N
zElectrical characteristics curves
Tr1
-50
Ta = 100°C
-20
25°C
−40°C
-10
-5
VCE = −6V
-2
-1
-0.5
-0.2
-0.1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
-10
Ta = 25°C
-35.0
-31.5
-8
-28.0
-24.5
-6
-21.0
-17.5
-4
-14.0
-10.5
-2
-7.0
-3.5µA
IB = 0
0
-0.4 -0.8 -1.2 -1.6 -2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
-100
Ta = 25°C
-500
-80 -450
-400
-350
-300
-60
-250
-200
-40
-150
-100
-20
-50µA
IB = 0
0
-1
-2
-3
-4
-5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
500
Ta = 25°C
200
VCE = -5V
-3V
-1V
100
50
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector
current ( Ι )
500
Ta = 100°C
25°C
200
-40°C
100
50
-0.2 -0.5 -1 -2
VCE = -6V
-5 -10 -20 -50 -100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector
current ( ΙΙ )
-1
Ta = 25°C
-0.5
-0.2
-0.1
-0.05
IC/IB = 50
20
10
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( Ι )
-1
lC/lB = 10
-0.5
-0.2
-0.1
-0.05
Ta = 100°C
25°C
-40°C
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
1000
500
200
Ta = 25°C
VCE = -12V
20
Cib
10
Ta = 25°C
f = 1MHz
IE = 0A
IC = 0A
Cob
5
100
50
0.5 1 2
5 10 20
50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
2
-0.5 -1 -2
-5 -10 -20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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