UMF28N Datasheet, PDF (2/5 Pages) Rohm – Power management (dual transistors)

Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−60
Collector-emitter voltage
VCEO
−50
Emitter-base voltage
VEBO
−6
Collector current
IC
−150
Collector power dissipation PC 150 (TOTAL)
Junction temperature
Tj
150
Storage temperature
Tstg −55 to +150
∗ 120mW per element must not be exceeded.
Unit
V
V
V
mA
mW ^∗
°C
°C
DTr2
Parameter
Symbol Limits
Supply voltage
Input voltage
VCC
50
VIN −10 to +40
Output current
Power dissipation
IO
IC(Max.)
PC
100
100
150(TOTAL)
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗ 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
mA
mW ^∗
°C
°C
UMF28N
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO −60
Collector-emitter breakdown voltage BVCEO −50
Emitter-base breakdown voltage
BVEBO −6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage
VCE(sat)
−
DC current transfer ratio
hFE
180
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
140
4
Max.
−
−
−
−0.1
−0.1
−0.5
390
−
5
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −60V
VEB = −6V
IC/IB = −50mA/−5mA
VCE = −6V, IC = −1mA
VCE = −12V, IE = 2mA, f = 100MHz
VCB = −12V, IE = 0A, f = 1MHz
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Transition frequency of the device.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
−
2.5
−
−
−
68
15.4
1.7
−
Typ.
−
−
0.1
−
−
−
22
2.1
250
Max.
0.4
−
0.3
0.36
0.5
−
28.6
2.6
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
IO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
−
−
VCE=10V, IE= −5mA, f=100MHz ^∗
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