UM5K1N_06 Datasheet, PDF (3/4 Pages) Rohm – 2.5V Drive Nch+Nch MOS FET

Transistors
UM5K1N
9
VGS=4V
8
Pulsed
7
ID=100mA
6
5
ID=50mA
4
3
2
1
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (˚C)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
0.5
0.2
Ta=−25˚C
0.1
25˚C
0.05
75˚C
125˚C
0.02
0.01
0.005
VDS=3V
Pulsed
0.002
0.001
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.8 Forward transfer
admittance vs. drain current
200m
100m
50m
VGS=0V
Pulsed
20m
Ta=125˚C
10m
75˚C
5m
25˚C
−25˚C
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage ( I )
200m
100m
50m
Ta=25˚C
Pulsed
20m
10m VGS=4V
0V
5m
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse drain current vs.
source-drain voltage ( II )
50
Ta=25˚C
f=1MHZ
VGS=0V
20
Ciss
10
5
Coss
Crss
2
1
0.5
0.1 0.2 0.5 1 2
5 10 20 50
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical capacitance vs.
drain-source voltage
1000
500
tf
td (off)
200
100
50
tr
20 _{td (on)}
10
5
Ta=25˚C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
2
0.1 0.2 0.5 1 2
5 10 20 50 100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurment circuit and
resultant waveforms)
zSwitching characteristics measurement circuit
VGS
ID
D.U.T.
RG
VDS
RL
VDD
Fig.13 Switching time measurement circuit
Pulse width
VGS
50%
10%
VDS
10%
90%
50%
10%
td (on) tr
ton
90%
tf
td (off)
toff
90%
Fig.14 Switching time waveforms
Rev.A
3/3