UM5K1N_06 Datasheet, PDF (1/4 Pages) Rohm – 2.5V Drive Nch+Nch MOS FET

Transistors
2.5V Drive Nch+Nch MOS FET
UM5K1N
UM5K1N
zStructure
Silicon N-channel MOS FET
zFeatures
1) Two 2SK3018 transistors in a single UMT package.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
5) Drive circuits can be simple.
zApplications
Interfacing, switching (30V, 100mA)
zExternal dimensions (Unit : mm)
UMT5
2.0
1.3
0.9
0.65 0.65
0.7
(5) (4)
1pin mark
(1) (2) (3)
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : K1
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
UM5K1N
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP^∗1
Total power dissipation
PD^∗2
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤50%
∗2 With each pin mounted on the recommended lands.
zEquivalent circui
(6)
(4)
Limits
30
±20
±100
±400
150
120
150
−55 to +150
Unit
V
V
mA
mA
mW / TOTAL
mW / ELEMENT
˚C
˚C
Tr1
Tr2
∗
Gate
Protection
Diode
(1)
(2)
∗
Gate
Protection
Diode
(3)
(1) Tr1 Gate
(2) Source
(3) Tr2 Gate
(4) Tr2 Drain
(6) Tr1 Drain
∗ A protection diode has been built in between
the gate and the source to protect against
static electricity when the product is in use.
Use the protection circuit when rated
voltagesare exceeded.
zThermal resistance
Parameter
Channel to ambient
Symbol
∗
Rth(ch-a)
∗ With each pin mounted on the recommended lands.
Limits
833
1042
Unit
°C / W / TOTAL
°C / W / ELEMENT
Rev.A
1/3