SH8M3_09 Datasheet, PDF (3/6 Pages) Rohm – 4V Drive Nch+Pch MOSFET

SH8M3
P-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS= ±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 μA VDS=−30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
−
40 56
ID= −4.5A, VGS= −10V
57 80 mΩ ID= −2.5A, VGS= −4.5V
65 90
ID= −2.5A, VGS= −4.0V
Forward transfer admittance
Yfs ^∗ 3.5
−
−
S ID= −2.5A, VDS= −10V
Input capacitance
Ciss
− 850 −
pF VDS= −10V
Output capacitance
Coss
− 190 −
pF VGS=0V
Reverse transfer capacitance Crss
− 120 −
Turn-on delay time
td (on) ^∗
−
10
−
Rise time
tr ^∗ −
25
−
Turn-off delay time
td (off) ^∗
−
60
−
Fall time
tf ^∗ −
25
−
Total gate charge
Qg ^∗ −
8.5
−
Gate-source charge
Qgs ^∗ −
2.5
−
Gate-drain charge
Qgd ^∗ −
3.0
−
pF f=1MHz
ns ID= −2.5A, VDD −15V
ns VGS= −10V
ns RL=6.0Ω
ns RG=10Ω
nC VDD −15V
nC VGS= −5V
nC ID= −4.5A
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD
−
− −1.2 V
Conditions
IS= −1.6A, VGS=0V
Data Sheet
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2009.12 - Rev.A