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SH8M3_09 Datasheet, PDF (2/6 Pages) Rohm – 4V Drive Nch+Pch MOSFET | |||
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SH8M3
N-ch
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
â
â ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
â
â
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS
â
â
1
μA VDS=30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0
â
2.5
V VDS=10V, ID=1mA
â
Static drain-source on-state
resistance
RDS
â
(on)
â
â
36 51
ID=5.0A, VGS=10V
52 73 mΩ ID=5.0A, VGS=4.5V
58 82
ID=5.0A, VGS=4V
Forward transfer admittance
Yfs â 3.0
â
â
S ID=5.0A, VDS=10V
Input capacitance
Ciss
â 230 â
pF VDS=10V
Output capacitance
Coss
â
80
â
pF VGS=0V
Reverse transfer capacitance Crss
â 50 â pF f=1MHz
Turn-on delay time
td (on) â â
6
â
ns ID=2.5A, VDD 15V
Rise time
tr â â
8
â
ns VGS=10V
Turn-off delay time
td (off) â
â
22
â
ns RL=6.0Ω
Fall time
tf â â
5
â
ns RG=10Ω
Total gate charge
Qg â â
3.9
â
nC VDD 15V
Gate-source charge
Qgs â â
1.1
â
nC VGS=5V
Gate-drain charge
Qgd â â
1.4
â
nC ID=5.0A
âPulsed
ï¬Body diode characteristics (Source-Drain) (Ta=25ï°C)
Parameter
Forward voltage
âPulsed
Symbol Min. Typ. Max. Unit
VSD â
â
â 1.2 V
Conditions
IS=6.4A, VGS=0V
Data Sheet
www.rohm.com
2/5
âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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