 English |
|
|
|
|
|
|
|
| SCT3080AL Datasheet, PDF (3/14 Pages) Rohm – N-channel SiC power MOSFET | |||
| |||
| ◁ |
SCT3080AL
ï¬Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
gfs *3
Ciss
Coss
Crss
VDS = 10V, ID = 10A
VGS = 0V
VDS = 500V
f = 1MHz
Co(er)
VGS = 0V
VDS = 0V to 300V
td(on) *3
tr *3
td(off) *3
tf *3
VDD = 300V, ID = 10A
VGS = 18V/0V
RL = 30ï
RG = 0ï
Eon *3
Eoff *3
VDD = 300V, ID=10A
VGS = 18V/0V
RG = 0ï L=500ïH
*Eon includes diode
reverse recovery
Datasheet
Values
Unit
Min. Typ. Max.
-
3.8
-
S
-
571
-
-
39
-
pF
-
19
-
-
99
-
pF
-
16
-
-
26
-
ns
-
27
-
-
16
-
-
41
-
ïJ
-
15
-
ï¬Gate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *3
Qgs *3
Qgd *3
VDD = 300V
ID = 10A
VGS = 18V
-
48
-
-
14
-
nC
-
17
-
Gate plateau voltage
V(plateau) VDD = 300V, ID = 10A
-
9.6
-
V
*1 Limited only by maximum temperature allowed.
*2 PW ï£ 10ïs, Duty cycle ï£ 1%
*3 Pulsed
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/12
2017.08 - Rev.C
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese