SCT3080AL Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET

SCT3080AL
Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
100
90 ^Ta ^{= 25ºC}
I_D=10A
80
V_GS = 18V/0V
70
R_G=0
L=500H
60
50
E_on
40
30
E_off
20
10
0
100
200
300
400
500
Drain - Source Voltage : V_DS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
400
350
T_a = 25ºC
V_DD=300V
V_GS = 18V/0V
300
R_G=0
L=500H
250
200
150
100
E_on
E_off
50
0
0
5 10 15 20 25 30
Drain Current : I_D [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
400
350
T_a = 25ºC
V_DD=300V
300
I_D=10A
V_GS = 18V/0V
L=500H
250
200
150
E_on
100
50
E_off
0
0
5 10 15 20 25 30
External Gate Resistance : R_G []
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10/12
2017.08 - Rev.C