RSS060P05 Datasheet, PDF (3/5 Pages) Rohm – 4V Drive Pch MOS FET

Transistor
zElectrical characteristic curves
10
V_DS= -10V
pulsed
Ta=125^oC
1
　　　75^oC
　　　25^oC
　　-25^oC
0.1
1000
V_GS= -10V
pulsed
100
Ta=125^oC
75^oC
25^oC
-25^oC
10
RSS060P05
1000
V_GS= -4.5V
pulsed
100
Ta=125^oC
75^oC
25^oC
-25^oC
10
0.01
1.0 1.5 2.0 2.5 3.0 3.5
Gate-Source Voltage : -V_GS [V]
Fig.1 Typical Transfer Characteristics
1
0.01
0.1
1
10
Drain Current : -I_D [A]
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (1)
1
0.01
0.1
1
10
Drain Current : -I_D [A]
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (2)
1000
V_GS= -4V
pulsed
100
Ta=125^oC
75^oC
25^oC
-25^oC
10
1
0.01
0.1
1
10
Drain Current : -I_D [A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (3)
200
150
100
50
I_D= -6.0A
Ta=25^oC
pulsed
10
Ta=125^oC
1
75^oC
25^oC
-25^oC
0.1
V_GS=0V
pulsed
0
0
I_D= -3.0A
5
10
Gate-Source Voltage : -V_GS [V]
0.01
15
0.0
0.5
1.0
1.5
Source-Drain Voltage : -V_SD [V]
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source-Current vs.
Source-Drain Voltage
10000
1000
10000
Ciss
1000
tf
Ta=25^oC
VDD= -25V
VGS= -10V
RG=10Ω
Pulsed
10
Ta=25^oC
8
V_DD= -25V
I_D= -6.0A
R_G=10Ω
6 ^Pulsed
Coss
100 td(off)
td(on)
4
100
Crss
Ta=25^oC
f=1MHz
10
tr
2
V_GS=0V
10
1
0
0.1
1
10
100
Drain-Source Voltage : -V_DS [V]
0.01
0.1
1
Drain Current : -ID [A]
10
0
15
30
45
Total Gate Charge : Qg [nC]
Fig.7 Typical capacitance vs.
Source-Drain Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
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