RSS060P05 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Pch MOS FET

Transistor
4V Drive Pch MOS FET
RSS060P05
RSS060P05
zStructure
Silicon P-channel
MOS FET
zFeatures
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
zApplications
Power switching , DC / DC converter , Inverter
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8)
(5)
(1)
(4)
1pin mark
1.27
0.2
Each lead has same dimensions
zPackaging dimensions
Package
Type
Code
Basic ordering unit (pieces)
RSS060P05
Taping
TB
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
V_DSS
-45
V
Gate-source voltage
V_GSS
±20
V
Drain current
Continuous I_D
±6.0
A
Pulsed
I_{DP *1}
±24
A
Source current
Continuous I_S
-1.6
A
(Body diode)
Pulsed
I_{SP *1}
-24
A
Total power dissipation
P_{D *2}
2
W
Chanel temperature
T_ch
150
o_C
Range of Storage temperature
T_stg -55 to +150
o_C
*1 PW≤10µｓ、Duty cycle≤1%
*2 Mounted on a ceramic board
zEquivalent circuit
(8)
(7)
(6)
(5)
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
zThermal resistance
Parameter
Chanel to ambient
* Mounted on a ceramic board
Symbol
R_{th(ch-a) *}
Limits
62.5
Unit
o_C/W
1/4