RB160M-60_1 Datasheet, PDF (3/4 Pages) Rohm – Schottky barrier diode

Diodes
RB160M-60
0.2
0.15
D=1/2
0.1
DC
0.05
0
Sin(θ＝180)
0 10 20 30 40 50 60
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
3
2.5
2
1.5
D=1/2
1
0A
0V
t
T
DC
Io
VR
D=t/T
VR=30V
Tj=150℃
0.5 _{Sin(θ＝180)}
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
3
2.5
2
DC
1.5
D=1/2
1
0A
Io
0V
t
VR
D=t/T
VR=30V
T Tj=150℃
0.5 _{Sin(θ＝180)}
0
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
30
No break at 30kV
25
20
15
10
AVE:5.70kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.D
3/3