RB160M-60_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB160M-60
RB160M-60
zApplications
General rectification
z Dimensions (Unit : mm)
1.6±0.1
0.1±0.1
　　　 0.05
z Land size figure (Unit : mm)
1.2
zFeatures
1) Small power mold type. (PMDU)
2) Low I_R.
3) High reliability.
PMDU
zConstruction
Silicon epitaxial planar
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
z Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
zStructure
0.25±0.05
1.81±0.1
4.0±0.1
φ1.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
V_RM
V_R
Io
I_FSM
Tj
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
Limits
60
60
1
30
150
-40 to +150
1.5MAX
Unit
V
V
A
A
℃
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
V_F
-
Reverse current
I_R
-
Capacitance terminals
Ct
-
Typ.
0.49
7.0
40
Max.
0.55
50
-
Unit
Conditions
V I_F=1.0A
µA V_R=60V
pF VR=10V , f=1MHz
Rev.D
1/3