RB160A60T-32 Datasheet, PDF (3/4 Pages) Rohm – Schottky barrier diode

Diodes
RB160A60
0.2
0.15
D=1/2
0.1
DC
0.05
0
Sin(θ＝180)
0 10 20 30 40 50 60
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
3
2.5
2
1.5
D=1/2
1
0A
Io
0V
t
VR
D=t/T
VR=30V
T Tj=125℃
DC
0.5 Sin(θ＝180)
0
0
25
50
75 100 125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
3
2.5
2
DC
1.5
D=1/2
1
0A
Io
0V
t
VR
D=t/T
VR=30V
T Tj=125℃
0.5 _{Sin(θ＝180)}
0
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
30
No break at 30kV
25
20
15
10
5
AVE:6.90kV
0
C=200pF
C=100pF
R=0Ω
R=1.5kΩ
ESD DISPERSION MAP
Rev.B
3/3