RB160A60T-32 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB160A60
zElectrical characteristic curves
1
Ta=75℃
Ta=125℃
0.1
Ta=25℃
Ta=-25℃
10000
1000
100
10
Ta=125℃
Ta=75℃
Ta=25℃
0.01
1
Ta=-25℃
0.1
0.001
0
200
400
600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
10 20 30 40 50 60
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
10
1
0
f=1MHz
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
530
100
100
Ta=25℃
90
IF=1A
Ta=25℃
VR=20V
90
Ta=25℃
f=1MHz
520
n=30pcs
80
n=30pcs
80
VR=10V
70
70
n=10pcs
510
60
60
50
50
500
40
40
490
AVE:495.1mV
480
30
20
AVE:6.966uA
10
0
30
20
AVE:37.9pF
10
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
150
30
Ifsm
1cyc
25
100
8.3ms
20
15
AVE:85.0A
50
10
100
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
50
Ifsm
8.3ms 8.3ms
1cyc
0
IFSM DISRESION MAP
5
AVE:11.7ns
0
trr DISPERSION MAP
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
200
1000
1.5
IF=0.5A
Rth(j-a)
150
Ifsm
t
IM=1mA time(s)
Rth(j-l)
100
td=300us
1
D=1/2
DC
100
Sin(θ＝180)
Rth(j-c)
10
0.5
50
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0
1
0.001 0.01 0.1
1
10 100 1000
0
0.5
1
1.5
2
TIME:t(s)
AVERAGE RECTIFIED
Rth-t CHARACTERISTICS
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3