RB088T150FH Datasheet, PDF (3/6 Pages) Rohm – Schottky Barrier Diode

RB088T150
250
225
200
175
150
125
100
1000
100
I_FSM
8.3ms
1cyc.
AVE : 153.5A
I_FSM DISRESION MAP
I_FSM
8.3ms 8.3ms
1cyc.
　
Data Sheet
30
25
20
15
10
5
0
1000
100
AVE : 10.7ns
Ta=25°C
I_F=0.5A
I_R=1A
Irr=0.25*I_R
n=10pcs
trr DISPERSION MAP
I_FSM
time
10
1
10
10
100
NUMBER OF CYCLES
I_FSM-CYCLE CHARACTERISTICS
Rth(j-a)
Rth(j-c)
1
Mounted on epoxy board
I_M=10mA
I_F=5A
0.1
0.001 0.01 0.1
time
1ms 300s
1
10
100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
10
1
10
100
TIME:t(ms)
I_FSM-t CHARACTERISTICS
6
5
D = 1/2
4
3
Sin(θ＝180)
DC
2
1
0
0123456789
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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2013.02 - Rev.B