RB088T150FH Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB088T150
Datasheet
Application
Switching power supply
Features
1) Cathode common dual type
2) Low I_R
3) High reliability
4) AEC-Q101 qualified
Construction
Silicon epitaxial planar
External dimensions (Unit : mm)
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
Structure
(1)
(2) (3)
(1) Cathode
(2) Anode
(3) Anode
1
1.2
1.3
0.8
(1) (2) (3)
2.54±0.5
0.07.75±0.1
0.05
2.6±0.5
ROHM : TO220FN
1
Manufacture Date
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
150
V
Reverse voltage (DC)
V_R
150
V
Average rectified forward current (*1)
Io
10
A
Forward current surge peak (60Hz・1cyc)(*2) I_FSM
50
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
(*1) 1/2 Io per Diode. Mounting on epoxi board. 180°Half sine wave
(*2) Per Diode.
Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Forward voltage
Reverse current
V_F
-
I_R
-
Thermal resistance
Rth(j-c) -
Typ. Max.
0.78 0.88
-
15
-
2
Unit
Conditions
V I_F=5.0A
A ^V_R^=150V
°C/W junction to case
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2013.02 - Rev.B