RB085B-90_09 Datasheet, PDF (3/4 Pages) Rohm – Schottky Barrier Diode

RB085B-90
Data Sheet
1000
100
Ifsm
t
Mounted on epoxy board
IM=100mA
100
I_F=5A
15
1ms _tim
300us
10
Rth(j-a)
D=1/2
10
DC
Sin(θ＝180)
Rth(j-c)
1
5
10
1
10
10
100
TIME : t(ms)
I_FSM-t CHARACTERISTICS
8
6
Sin(θ=180)
4
D=1/2
DC
2
0
0 10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE : V_R(V)
V_R-P_R CHARACTERISTICS
30
No break at 30kV
25
20
15
10
AVE:5.30kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
0.1
0.001
0.01 0.1
1
10 100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
30
20
DC
D=1/2
10
0A
Io
0V
t
V_R
D=t/T
V_R=45V
T Tj=150°C
Sin(θ=180)
0
0
25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
Derating Curve"(Io-Ta)
0
0
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
30
20
DC
0A
Io
0V
t
V_R
D=t/T
V_R=45V
T Tj=150°C
D=1/2
10
Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPARATURE:Tc(°C)
Derating Curve(Io-Tc)
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3/3
2009.11 - Rev.C