RB085B-90_09 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB085B-90
zApplication
General rectification
zDimensions(Unit : mm)
zLand size figure(Unit : mm)
6.0
zFeatures
1)Power mold type.(CPD)
2)Low V_F
3)High reliability
zConstruction
Silicon epitaxial planar
1.6 1.6
CPD 2.3 2.3
ROHM : CPD
JEITA : SC-63
Manufacture Date
zStructure
(2)
zTaping dimensions(Unit : mm)
(1) (3)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
90
V
Reverse voltage (DC)
V_R
90
V
Average rectified forward current(*1)
Io
10
A
Forward current surge peak(60Hz / 1cyc)(*1) I_FSM
45
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +150
°C
(*1)Business frequencies, Rating of R-load, Tc=85°C Max.
zElectrical characteristic(Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
V_F
-
- 0.83
I_R
-
-
150
θjc
-
-
6.0
Unit
V
µA
°C/W
Conditions
I_F=5.0A
V_R=90V
junction to case
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2009.11 - Rev.C