RB081L-20_1 Datasheet, PDF (3/4 Pages) Rohm – Schottky barrier diode

Diodes
RB081L-20
2
1.5
Sin(θ＝180)
1
DC
D=1/2
0.5
0
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
0
0A
Io
0V
VR
t
D=t/T
VR=10V
T Tj=125℃
DC
D=1/2
Sin(θ＝180)
25
50
75 100 125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
10
9
8
7
6
5
4
3
2
1
0
0
DC
D=1/2
0A
Io
0V
VR
t
D=t/T
VR=10V
T ^Tj=125℃
-
Sin(θ＝180)
25
50
75 100 125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
30
No break at 30kV
25
20
AVE:24.8kV
15
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.B
3/3