RB081L-20_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB081L-20
RB081L-20
zApplications
General rectification
z External dimensions (Unit : mm)
zFeatures
1) Small power mold type. (PMDS)
2) Low V_F, Low I_R.
3) High reliability.
2.6±0.2
39
①②
0.1±0.02
　　　 0.1
zConstruction
Silicon epitaxial planar
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacuture Date
z Taping specifications(Unit : mm)
2.0±0.05
4.0±0.1
z Land size figure (Unit : mm)
2.0
PMDS
zStructure
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
25
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current (*1)
Io
5
A
Forward current surge peak （60Hz・1cyc） I_FSM
70
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
(*1) Mounted on epoxy board. 180°Harf sine wave
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
Reverse current
V_F
-
I_R
-
Typ.
-
-
Max.
0.45
700
Unit
Conditions
V I_F=0.5A
µA V_R=20V
Rev.B
1/3