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RB068LAM100 Datasheet, PDF (3/7 Pages) Rohm – Schottky Barrier Diode
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RB068LAM100
lElectrical Characteristic Curves
Data Sheet
1000
100
IFSM
time
1cyc
Ta=25°C
10
1
10
100
TIME : t (ms)
IFSM-t CHARACTERISTICS
2.0
Tj = 150°C
D = 1/2
1.5
Sin(θ=180)
DC
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
Io-PF CHARACTERISTICS
60
Tj = 150°C
50
40
30
Sin(θ=180)
D = 1/2
20
DC
10
0
0
20
40
60
80 100
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
100
10
Rth(j-a)
Rth(j-c)
1
0.1
0.001
Substrate conditions:
• Material : glass epoxy substrate (FR4)
• Size 20mm×20mm×0.8mm
• Both side is all covered w/ copper (35um thickness)
0.01 0.1 1 10 100 1000
TIME : t (s)
Rth-t CHARACTERISTICS
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2016.09 - Rev.A
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