RB068LAM100 Datasheet, PDF (1/7 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB068LAM100
Data Sheet
lApplications
General rectification
lFeatures
1) Small power mold type
(PMDTM)
2) High reliability
3) Super low I_R
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10
0.05
lLand Size Figure (Unit : mm)
2.0
PMDTM
(2)
1.50±0.20
0.95±0.10
ROHM : PMDTM
JEDEC : SOD-128
: Manufacture Date
lTaping Dimensions (Unit : mm)
(1) Cathode
lStructure
(2) Anode
2.00 ±0.05
4.0 ±0.1
φ1.5
+0.1
-0.0
0.25 ±0.05
φ1.5
+0.1
-0.0
2.8 ±0.05
4.0 ±0.1
1.25 ±0.10
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
V_RM
Reverse voltage
V_R
Average forward rectified current
I_O
Non-repetitive forward current surge peak I_FSM
Operating junction temperature
T_j
Storage temperature
T_stg
Conditions
Duty≦0.5
Direct reverse voltage
Glass epoxy board mounted, 60Hz half
sin wave, resistive load, T_c=120ºC Max.
60Hz half sin wave, onecycle,
non-repetitive at T_a=25ºC
-
-
Limits Unit
100
V
100
V
2
A
70
A
150
°C
-55 to +150 °C
lElectrical Characteristics (T_j = 25°C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Conditions
I_F=2.0A
V_R=100V
Min. Typ. Max. Unit
-
- 0.81 V
-
- 1.5 mA
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2016.09 - Rev.A