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| QS8M51 Datasheet, PDF (3/11 Pages) Rohm – 4V Drive Nch + Pch MOSFET | |||
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QS8M51
ï¬ Electrical characteristics (Ta = 25ï°C)
<Tr2(Pch)>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS(th)
Static drain-source on-state
resistance
RDS(on)*
Min.
-
ï100
-
ï1
-
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l * 1.5
Ciss
-
Coss
-
Crss
-
td(on)*
-
tr *
-
td(off)*
-
tf *
-
Qg *
-
Qgs *
-
Qgd *
-
ï¬Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
VSD *
Min.
-
*Pulsed
Typ.
-
-
-
-
350
380
400
-
950
45
20
10
15
60
10
17
4.5
5
Max.
ï±10
-
ï1
ï2.5
470
510
540
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
ïA VGS=±20V, VDS=0V
V ID=ï1mA, VGS=0V
ïA VDS=ï100V, VGS=0V
V VDS=ï10V, ID=ï1mA
ID=ï1.5A, VGS=ï10V
mï ID=ï0.75A, VGS=ï4.5V
ID=ï0.75A, VGS=ï4V
S VDS=ï10V, ID=ï1.5A
pF VDS=ï25V
pF VGS=0V
pF f=1MHz
ns VDD ï50V, ID=ï0.75A
ns VGS=ï10V
ns RL=66ïï¬ RG=10ï
ns
nC VDD ï50V, ID=ï1.5A
nC VGS=ï5V
nC
Typ.
-
Max.
ï1.2
Unit
Conditions
V Is=ï0.75A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/10
2011.07 - Rev.A
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