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QS8M51 Datasheet, PDF (1/11 Pages) Rohm – 4V Drive Nch + Pch MOSFET | |||
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Data Sheet
4V Drive Nch + Pch MOSFET
QS8M51
ï¬ Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
ï¬ Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
ï¬Features
1) Low on-resistance.
2) Low voltage drive (4V drive).
3) Small surface mount package (TSMT8).
ï¬ Application
Switching
(1) (2) (3) (4)
Abbreviated symbol : M51
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8M51
Taping
TR
3000
ï¡
ï¬ Inner circuit
(8)
(7)
(6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
â2
â2
â1
â1
(1)
(2)
(3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
*2
PD
Tch
Tstg
100
ï100
ï±20
ï±20
ï±2
ï±1.5
ï±6
ï±6
1.0
ï1.0
6
ï6
1.5
1.25
150
ï55 to ï«150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
ï°C
ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/10
2011.07 - Rev.A
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