QS8M12TCR Datasheet, PDF (3/11 Pages) Rohm – 4V Drive Nch Pch MOSFET

QS8M12
 Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Parameter
Symbol
Gate-source leakage
I_GSS
Drain-source breakdown voltage V _(BR)DSS
Zero gate voltage drain current
I_DSS
Gate threshold voltage
V_{GS (th)}
Static drain-source on-state
resistance
R_DS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Y_fs l*
C_iss
C_oss
C_rss
t_d(on)*
t_{r *}
t_d(off)*
t_f *
Q_g *
Q_gs *
Q_{gd *}
Min.
-
30
1.0
-
-
-
3
-
-
-
-
-
-
-
-
-
-
　
Typ.
-
-
-
-
40
55
60
-
800
120
110
8
20
80
50
8.4
3.0
3.5
Max.
10
-
1
2.5
56
77
84
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A V_GS=20V, V_DS=0V
V I_D=1mA, V_GS=0V
A V_DS=30V, V_GS=0V
V V_DS=10V, I_D=1mA
I_D=4A, V_GS=10V
m I_D=2A, V_GS=4.5V
I_D=2A, V_GS=4.0V
S V_DS=10V, I_D=4A
pF V_DS=10V
pF V_GS=0V
pF f=1MHz
ns I_D=2A, V_DD 15V
ns V_GS=10V
ns R_L=7.5
ns R_G=10
nC I_D=4A, V_DD 15V
nC V_GS=5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol Min.
V_SD *
-
Typ.
-
*Pulsed
Max. Unit
Conditions
1.2 V I_s=4A, V_GS=0V
Data Sheet
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2011.05 - Rev.A