QS8M12TCR Datasheet, PDF (1/11 Pages) Rohm – 4V Drive Nch Pch MOSFET

Data Sheet
4V Drive Nch + Pch MOSFET
QS8M12
 Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
 Application
Switching
(1) (2) (3) (4)
Abbreviated symbol : M12
Inner circuit
(8)
(7)
(6)
(5)
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8M12
Taping
TCR
3000

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
 Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
Symbol
Limits
Unit
Tr1 : N-ch Tr2 : P-ch
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
*2
P_D
30
30
20
20
4
4
12
12
1.0
1.0
12
12
1.5
1.25
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
Tch
150
C
Tstg
55 to 150
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
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2011.05 - Rev.A