QS6U24_1 Datasheet, PDF (3/5 Pages) Rohm – 4V Drive Pch+SBD MOS FET

Transistor
zElectrical characteristic curves
10
VDS=−10V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
0.1 ^{Ta=−25°C}
0.01
0.001
1 1.5 2 2.5 3 3.5 4 4.5 5
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.1 Typical Transfer Characteristics
10000
Ta=125°C
1000
Ta=75°C
Ta=25°C
Ta=−25°C
VGS=−10V
Pulsed
100
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (Ι)
QS6U24
10000
Ta=125°C
Ta=75°C
Ta=25°C
1000
Ta=−25°C
VGS=−4.5V
Pulsed
100
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ)
10000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1000
VGS=−4V
Pulsed
100
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙΙ)
1200
Ta=25°C
1100
ID=−1.2A
Pulsed
ID=−0.6A
1000
900
800
700
600
500
400
300
200
0 2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
10000
VGS=−4.0V
VGS=−4.5V
1000
VGS=−10V
Ta=25°C
Pulsed
100
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current ( )
10
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
VGS=0V
Pulsed
0.01
0
0.5
1
1.5
2
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.7 Reverse Drain Current vs.
Source-Drain Voltage
1000
Ta=25°C
f=1MHZ
VGS=0V
100
Ciss
Coss
Crss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
1000
Ta=25°C
VDD=−15V
VGS=−10V
RG=10Ω
Pulsed
100
tf
td(off)
10
td(on)
tr
1
0.01
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.9 Switching Characteristics
Rev.B
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