QS6U24_1 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Pch+SBD MOS FET

Transistor
4V Drive Pch+SBD MOS FET
QS6U24
QS6U24
zStructure
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The QS6U24 combines Pch MOS FET with a
Schottky barrier diode in a TSMT6 package.
2) Low on-state resisternce with a fast switching.
3) Low voltage drive (4V).
4) Built-in schottky barrier diode has low forward voltage.
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : U24
zApplications
Load switch, DC/DC conversion
zInner circuit
(6)
(5)
(4)
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
QS6U24
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Limits
Drain-source voltage
VDSS
−30
Gate-source voltage
VGSS
±20
Drain current
Continuous
Pulsed
ID
IDP ∗1
±1.0
±2.0
Source current
(Body diode)
Continuous
Pulsed
IS
ISP ^∗1
−0.3
−1.2
Channel temperature
Tch
150
Power dissipation
<Di >
PD ^∗3
0.9
Parameter
Symbol
Limits
Repetitive peak reverse voltage
VRM
25
Reverse voltage
VR
20
Forward current
Forward current surge peak
IF
0.7
IFSM ^∗2
3.0
Junction temperature
Tj
150
Power dissipation
<MOSFET AND Di>
PD ∗3
0.7
Parameter
Symbol
Limits
Total power dissipatino
PD ∗3
1.25
Range of strage temperature
Tstg
−55 to +150
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
Unit
V
V
A
A
A
A
°C
W/ELEMENT
Unit
V
V
A
A
°C
W/ELEMENT
Unit
W/TOTAL
°C
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1)Anode
(2)Source
(3)Gate
(3) ^(4)Drain
(5)N/C
(6)Cathode
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Rev.B
1/4