QS5K2_0610 Datasheet, PDF (3/4 Pages) Rohm – 2.5V Drive Nch+Nch MOSFET

Transistors
zElectrical characteristics curves
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
10
0.01
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
QS5K2
1000
tf
100
td(off)
10
td(on)
tr
Ta=25°C
VDD=15V
VGS=4.5V
RG=10Ω
Pulsed
1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
6
Ta=25°C
VDD=15V
5 ^ID=2A
RG=10Ω
Pulsed
4
3
2
1
0
0
1
2
3
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1
Ta=125°C
75°C
25°C
−25°C
0.1
VDS=10V
Pulsed
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
1000
Ta=125°C
75°C
25°C
−25°C
100
VGS=4.5V
Pulsed
300
ID=2A
200
ID=1A
100
Ta=25°C
Pulsed
10
Ta=125°C
75°C
1
25°C
−25°C
0.1
VGS=0V
Pulsed
0
0 1 2 3 4 5 6 7 8 9 10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate source Voltage
0.01
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
Ta=125°C
75°C
25°C
−25°C
100
VGS=4.0V
Pulsed
1000
Ta=125°C
75°C
25°C
−25°C
100
VGS=2.5V
Pulsed
10
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
10
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
10
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
Rev.A
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