QS5K2_0610 Datasheet, PDF (1/4 Pages) Rohm – 2.5V Drive Nch+Nch MOSFET

Transistors
2.5V Drive Nch+Nch MOSFET
QS5K2
QS5K2
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
3) Space saving, small surface mount package (TSMT5).
zApplications
Switching
zPackaging specifications
Type
QS5K2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zDimensions (Unit : mm)
TSMT5
2.9
1.9
0.95 0.95
(5) (4)
1.0MAX
0.85
0.7
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : K02
zInner circuit
(5)
∗2
(4)
∗2
∗1
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Gate
(2) Tr1 Source
Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
Total power dissipation
PD ^∗2
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Tch
Tstg
Limits
30
12
±2.0
±8.0
0.8
3.2
1.25
0.9
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
100
139
Unit
°C/W
°C/W
Rev.A
1/3