FML9_1 Datasheet, PDF (3/5 Pages) Rohm – General purpose transistor (isolated transistor and diode)

Transistors
zElectrical characteristic curves
Tr1
1000
Ta=100°C
VCE=−2V
Pulsed
Ta=25°C
Ta=−40°C
100
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs.
collector current
FML9
10
IC/IB=20/1
VCE=−2V
Pulsed
Ta=−40°C
1
Ta=25°C
Ta=100°C
0.1
VBE(sat)
VCE(sat)
Ta=100°C
0.01
Ta=25°C
Ta=−40°C
1
Ta=25°C
Pulsed
0.1
IC/IB=50/1
0.01 ^IC/IB=20/1
IC/IB=10/1
0.001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Base-emitter saturation voltage
vs. collector current
0.001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
10
VCE=−2V
Pulsed
1
Ta=100°C
0.1
Ta=25°C
Ta=−40°C
0.01
0.001
0
0.5
1
1.5
BASE TO EMITTER CURRENT : VBE(on) (V)
Fig.4 Grounded emitter propagation
characteristics
1000
10000
Ta=25°C
VCE=−2V
f=100MHz
Ta=25°C
VCE=−5V
f=100MHz
1000
100
10
0.001
0.01
0.1
1
10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
100
tstg
tf
10
tdon
tr
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Switching time
1000
10
Ta=25˚C
Ta=25°C
IE=0mA
Single Pulsed
f=1MHz
100
Cib
1ms
1
10ms
PW=100ms
Cob
10
0.1
DC Operation
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
0.01
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operation area
Rev.A
3/4