FML9_1 Datasheet, PDF (2/5 Pages) Rohm – General purpose transistor (isolated transistor and diode)

Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pc
Tj
Tstg
Limits
−15
−12
−6
−1.5
−3
200
150
−40 to +125
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
Unit
V
V
V
A
A ^∗1
mW ^∗2
°C
°C
Di2
Parameter
Symbol Limits
Unit
Reak reverse voltage
VRM
25
V
Average rectified forward current
IF
700
mA
Forward current surge peak (60HZ, 1∞) IFSM
3
A
Reverse voltage (DC)
VR
20
V
Junction temperature
Tj
125
°C
Range of storage temperature
Tstg −40 to +125 °C
FML9
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown voltage
BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Cob
Di2
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Min. Typ. Max. Unit
Conditions
−12
−
−
V IC=−1mA
−15
−
−
V IC=−10µA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−15V
−
−
−100 nA VEB=−6V
−
−110 −200 mV IC=−500mA, IB=−25mA
270
−
680
− VCE=−2V, IC=−200mA
−
400
−
MHz VCE=−2V, IE=200mA, f=100MHz
−
12
−
pF VCB=−10V, IE=0mA, f=1MHz
Min. Typ. Max. Unit
Conditions
−
−
490 mV IF=700mA
−
−
200
µA VR=20V
Rev.A
2/4