2SD1760 Datasheet, PDF (3/3 Pages) Rohm – Power Transistor 50V, 3A

Transistors
2SD1760 / 2SD1864
10
lC/lB = 10
5
2
1 Ta = -25°C
0.5
VBE (sat)
0.2
25°C
100°C
0.1
Ta = 100°C
0.05
0.02
VCE (sat)
25°C
0.01
0.01 0.02 0.05 0.1 0.2 0.5
-25°C
12
5 10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation voltage
vs. collector current
1000
500
Ta = 25°C
VCE = 5V
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 5001000
EMITTER CURRENT : −IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
1000
500
200
100
50
Ta = 25°C
f = 1MHz
IE = 0A
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance
vs. collector-base voltage
5
2
1
0.5
DC
0.2
0.1
0.05
0.02 Ta = 25°C
0.01 ^{*Single pulse}
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
(2SD1760)
VCE=5v
IC=0.2A
100
10
1
0.1
1 10 100 1Sec 10Sec 100Sec
TIME : T (ms)
Fig.11 Transient thermal resistance
(2SD1760)
5
2
1
0.5
0.2
0.1
0.05 _Ta=25°C
Single
nonrepetitive
0.02 _pulse
0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.12 Safe operating area
(2SD1864)
100
10
1
0.1
1
10 100 1 10Sec 100Sec1000Sec
TIME : T (ms)
Fig.13 Transient thermal resistance
(2SD1864)